PART |
Description |
Maker |
T436432B-7SG T436432B-55SG T436432B-5SG T436432B-6 |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology http:// Taiwan Memory Technolog...
|
M52S32321A-7.5BIG M52S32321A-10BIG M52S32321A-6BIG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M52D32321A-7BG M52D32321A09 M52D32321A-10BG |
512K x 32Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
K4S283233F-M |
1M x 32Bit x 4 Banks SDRAM in 90 FBGA Data Sheet
|
Samsung Electronic
|
GS8150F32 |
16Mb12K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology
|
K4S51323LF-F1H K4S51323LF-MC K4S51323L K4S51323LF- |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM connector From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F- |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY5 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M5632 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM RES 180K 5% 0603 Surface Mount Resistors Thick Film Chip Resistors
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
M52D32321A-10BG |
512K x 32Bit x 2Banks Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 8 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|